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Zhang, Kangzhan

Kangzhan Zhang

Education

PhD
Fudan University, 1992

    About This Team Member

    Kangzhan received his PhD in 1992 from Fudan University specializing in the use of molecular beams and laser technology to study the dynamics of semiconductor surface reactions. After spending one year as a post-doc with Prof. Ned Green of Brown University studying the energy transfer between gas molecules and solid surfaces, he joined the group to become our soft X-ray photoemission expert.  He ran the U8 beamline at the National Synchroton Light Source from 1995 to 2000.  He initially worked for a start-up company called Torrex, Inc in Silicon Valley and then for Applied Materials.  His papers while in the group focused on studies of the silicon/silicon oxide interface.

    Kangzhan died on March 26, 2007.  He was a talented, committed scientist and we will miss our valued colleague.

    Publications

    Reflection-absorption infrared investigation of hydrogenated silicon oxide generated by the thermal decomposition of H8Si8O12 clusters.

    K. T. Nicholson, K. Z. Zhang, M. M. Banaszak Holl, and F. R. McFeely.
    J. Appl. Phys.
    2002,
    91,
    9043-9048.

    Self-limiting Chemical Vapor Deposition of an Ultra-thin Silicon Oxide Film.

    K. A. Miller, C. John, K. Z. Zhang, K. T. Nicholson, F. R. McFeely, and M. M. Banaszak Holl.
    Thin Solid Films
    2001,
    397,
    78-82.

    The Formation of Mixed Layers Derived from Functional Silicon Oxide Clusters on Gold.

    K. T. Nicholson, K. Z. Zhang, M. M. Banaszak Holl, F. R. McFeely, G. Calzaferri, and U. C. Pernisz.
    Langmuir
    2001,
    17,
    7879.

    The Dynamic Nature of Hydridosilsesquioxane Clusters on Gold Surfaces.

    K. T. Nicholson, K. Z. Zhang, M. M. Banaszak Holl, F. R. McFeely, U. C. Pernisz.
    Langmuir
    2000,
    16,
    8396-8403.

    Chemisorption of H8Si8O12 Clusters on Gold via a Novel Si-H Bond Activation.

    K. T. Nicholson, K. Z. Zhang, M. M. Banaszak Holl.
    J. Am. Chem. Soc.
    1999,
    121,
    3232-3233.

    Extra-Atomic Relaxation and Core-Level Binding Energy Shifts at Si/SiO2 interfaces: the Effects of Cluster Size on Physical Models.

    K. Z. Zhang, M. M. Banaszak Holl, F. R. McFeely.
    J. Phys. Chem.
    1998,
    102,
    3930.

    The Role of Second-Neighbor Effects in Photoemission: Are Silicon Surfaces and Interfaces Special?

    Z. Zhang, K. E. Litz, M. M. Banaszak Holl, F. R. McFeely.
    Appl. Phys. Lett.
    1998,
    72,
    46.

    A New Model Silicon/Silicon Oxide Interface Synthesized from H10Si10O15 and Si(100)-2x1.

    K. Z. Zhang, L. M. Meeuwenberg, M. M. Banaszak Holl, F. R. McFeely.
    Japan. J. of Appl. Phys.
    1997,
    36,
    1622.

    Chloroethane Physisorbed on Hydrogenated Si(111): A Test System for the Evaluation of Core Level XPS Assignment Rules at Si/SiO2 Interfaces.

    F. R. McFeely, K. Z. Zhang, M. M. Banaszak Holl.
    Mat. Res. Soc. Symp. Proc.
    1997,
    446,
    15.

    Soft X-ray Si 2p core-level spectra of H8Si8O12 physisorbed on Si(111)-H: additional experimental evidence regarding the binding energy shift of the HSiO3 fragment.

    K. Z. Zhang, M. M. Banaszak Holl, F. R. McFeely.
    Mat. Res. Soc. Symp. Proc.
    1997,
    446,
    241.

    The Role of Extra-Atomic Relaxation in Determining Si 2p Binding Energy Shifts at Silicon/Silicon Oxide Interfaces.

    K. Z. Zhang, J. N. Greeley, M. M. Banaszak Holl, F. R. McFeely.
    J. Appl. Phys.
    1997,
    82,
    2298.

    An Inquiry Concerning the Principles of Si 2p Core-Level Photoemission Shift Assignments at the Si/SiO 2 Interface.

    F. R. McFeely, K. Z. Zhang, M. M. Banaszak Holl, S. Lee, J. E. Bender.
    J. Vac. Sci. Technol. B
    1996,
    14,
    2824.

    Si 2p Core-Level Shifts at the Si(100)-SiO2Interface: An Experimental Study.

    K. Z. Zhang, M. M. Banaszak Holl. J. E. Bender IV, S. Lee, F. R. McFeely.
    Phys. Rev. B
    1996,
    54,
    7686.