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Silicon-Silicon Oxide Interface

Band alignment issues related to HfO2/SiO2/p-Si gate...

Band alignment issues related to HfO2/SiO2/p-Si gate stacks.

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S. Sayan, T. Emge, E. Garfunkel, X.Zhao, L. Wielunksi, R. A. Bartynski, D. Vanderbilt, J.S. Suehle, S. Suzer, and M. Banaszak-Holl.
Journal of Applied Physics
2004,
96,
7485-7491.
See:

Simulated Scanning Tunneling Microscopy Images of Three-Dimensional...

Simulated Scanning Tunneling Microscopy Images of Three-Dimensional Clusters: H8Si8O12 on Si(100)-2x1.

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Y. Chen, K. S. Schneider, B. G. Orr, M. M. Banaszak Holl.
Phys. Rev. B
2004,
70,
85402.

Valence and conduction band offsets of a ZrO2/SiOxNy/n-Si...

Valence and conduction band offsets of a ZrO2/SiOxNy/n-Si CMOS gate stack: a combined photoemission and inverse phtotemission study.

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S. Sayan, R. A. Bartynski, X. Zhao, E. P. Gusev, D. Vanderbilt, M. Croft, M. Banaszak Holl, E. Garfunkel.
Physica Status Solidi B
2004,
241,
2246-2252.
See:

The differential reactivity of octahydridosilsesquioxane...

The differential reactivity of octahydridosilsesquioxane on Si(100)-2×1 and Si(111)-7×7: A comparative experimental study.

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K. S. Schneider, K. T. Nicholson, T. M. Owens, B.G. Orr, M. M. Banaszak Holl.
Ultramicroscopy
2003,
97,
35-45.

Investigation of Hydridosilsesquioxane-Based Silicon...

Investigation of Hydridosilsesquioxane-Based Silicon Oxide Deposition on Si(111)-7´7.

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K.S. Schneider, T. M. Owens, K. T. Nicholson, B. J. Ludwig, J. N. Greeley, B. G. Orr, M. M. Banaszak Holl.
Langmuir
2002,
18,
6233-6241.

Reflection-absorption infrared investigation of hydrogenated...

Reflection-absorption infrared investigation of hydrogenated silicon oxide generated by the thermal decomposition of H8Si8O12 clusters.

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K. T. Nicholson, K. Z. Zhang, M. M. Banaszak Holl, and F. R. McFeely.
J. Appl. Phys.
2002,
91,
9043-9048.

A New Infrared and Density Functional Theory Study...

A New Infrared and Density Functional Theory Study of Model Silicon/Silicon Oxide Interfaces.

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K. T. Nicholson and M. M. Banaszak Holl.
Phys. Rev. B.
2001,
64,
155317.

Self-limiting Chemical Vapor Deposition of an Ultra-thin...

Self-limiting Chemical Vapor Deposition of an Ultra-thin Silicon Oxide Film.

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K. A. Miller, C. John, K. Z. Zhang, K. T. Nicholson, F. R. McFeely, and M. M. Banaszak Holl.
Thin Solid Films
2001,
397,
78-82.

Determination of Spherosiloxane Cluster Bonding to...

Determination of Spherosiloxane Cluster Bonding to Si(100)-2´1 by Scanning Tunneling Microscopy K.

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S. Schneider, Z. Zhang, M. M. Banaszak Holl, B. G. Orr U. C. Pernisz.
Phys. Rev. Lett.
2000,
85,
602.

H8Si8O12 Clusters on Si(100)-2x1 and Gold: A Comparative...

H8Si8O12 Clusters on Si(100)-2x1 and Gold: A Comparative Infrared Spectroscopic Study.

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K. T. Nicholson, M. A. Biscotto, M. M. Banaszak Holl.
Mat. Res. Soc. Symp. Proc
1999,
567,
543-548.

Nucleation of chemical vapor deposited silicon nitride...

Nucleation of chemical vapor deposited silicon nitride on silicon dioxide.

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M. Copel, P. R. Varekamp, D. W. Kisker, F. R. McFeely, K. E. Litz, M. M. Banaszak Holl.
Appl. Phys. Lett.
1999,
74,
1830-1832.

An Infrared Study of H8Si8O12Cluster Adsorption on...

An Infrared Study of H8Si8O12Cluster Adsorption on Si(100) Surfaces.

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J. Eng, K. Ragavachari, L. M. Struck, Y. J. Chabal, B. E. Bent, M. M. Banaszak Holl, F. R. McFeely, A. M. Michaels, G. W. Flynn, S. B. Christman, E. E. Chaban, G. P. Williams, K. Radermacher, S. Mantl.
J. Chem. Phys.
1998,
108,
8680.
See:

Extra-Atomic Relaxation and Core-Level Binding Energy...

Extra-Atomic Relaxation and Core-Level Binding Energy Shifts at Si/SiO2 interfaces: the Effects of Cluster Size on Physical Models.

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K. Z. Zhang, M. M. Banaszak Holl, F. R. McFeely.
J. Phys. Chem.
1998,
102,
3930.

Infrared Study of H10Si10O15 Chemisorbed on Si(100)-2x1

Infrared Study of H10Si10O15 Chemisorbed on Si(100)-2x1.

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J. N. Greeley, M. M. Banaszak Holl.
Inorg. Chem.
1998,
37,
6014-6017.

Surface Infrared Studies of Silicon/Silicon Oxide Interfaces...

Surface Infrared Studies of Silicon/Silicon Oxide Interfaces Derived from Hydridosilsesquioxane Clusters.

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J. N. Greeley, L. M. Meeuwenberg, M. M. Banaszak Holl.
J. Am. Chem. Soc.
1998,
120,
7776.

The Role of Second-Neighbor Effects in Photoemission:...

The Role of Second-Neighbor Effects in Photoemission: Are Silicon Surfaces and Interfaces Special?

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Z. Zhang, K. E. Litz, M. M. Banaszak Holl, F. R. McFeely.
Appl. Phys. Lett.
1998,
72,
46.

A New Model Silicon/Silicon Oxide Interface Synthesized...

A New Model Silicon/Silicon Oxide Interface Synthesized from H10Si10O15 and Si(100)-2x1.

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K. Z. Zhang, L. M. Meeuwenberg, M. M. Banaszak Holl, F. R. McFeely.
Japan. J. of Appl. Phys.
1997,
36,
1622.

Chloroethane Physisorbed on Hydrogenated Si(111): A...

Chloroethane Physisorbed on Hydrogenated Si(111): A Test System for the Evaluation of Core Level XPS Assignment Rules at Si/SiO2 Interfaces.

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F. R. McFeely, K. Z. Zhang, M. M. Banaszak Holl.
Mat. Res. Soc. Symp. Proc.
1997,
446,
15.

Soft X-ray Si 2p core-level spectra of H8Si8O12 physisorbed...

Soft X-ray Si 2p core-level spectra of H8Si8O12 physisorbed on Si(111)-H: additional experimental evidence regarding the binding energy shift of the HSiO3 fragment.

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K. Z. Zhang, M. M. Banaszak Holl, F. R. McFeely.
Mat. Res. Soc. Symp. Proc.
1997,
446,
241.

The Role of Extra-Atomic Relaxation in Determining...

The Role of Extra-Atomic Relaxation in Determining Si 2p Binding Energy Shifts at Silicon/Silicon Oxide Interfaces.

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K. Z. Zhang, J. N. Greeley, M. M. Banaszak Holl, F. R. McFeely.
J. Appl. Phys.
1997,
82,
2298.