Silicon-Silicon Oxide Interface

Band alignment issues related to HfO₂/SiO₂/p-Si gate stacks.

Simulated Scanning Tunneling Microscopy Images of Three-Dimensional Clusters: H₈Si₈O₁₂ on Si(100)-2x1.

Valence and conduction band offsets of a ZrO₂/SiO_xN_y/n-Si CMOS gate stack: a combined photoemission and inverse phtotemission study.

The differential reactivity of octahydridosilsesquioxane on Si(100)-2×1 and Si(111)-7×7: A comparative experimental study.

Investigation of Hydridosilsesquioxane-Based Silicon Oxide Deposition on Si(111)-7´7.

Reflection-absorption infrared investigation of hydrogenated silicon oxide generated by the thermal decomposition of H₈Si₈O₁₂ clusters.

A New Infrared and Density Functional Theory Study of Model Silicon/Silicon Oxide Interfaces.

Self-limiting Chemical Vapor Deposition of an Ultra-thin Silicon Oxide Film.

Determination of Spherosiloxane Cluster Bonding to Si(100)-2´1 by Scanning Tunneling Microscopy K.

H₈Si₈O₁₂ Clusters on Si(100)-2x1 and Gold: A Comparative Infrared Spectroscopic Study.

Nucleation of chemical vapor deposited silicon nitride on silicon dioxide.

An Infrared Study of H₈Si₈O₁₂Cluster Adsorption on Si(100) Surfaces.

Extra-Atomic Relaxation and Core-Level Binding Energy Shifts at Si/SiO₂ interfaces: the Effects of Cluster Size on Physical Models.

Infrared Study of H₁₀Si₁₀O₁₅ Chemisorbed on Si(100)-2x1.

Surface Infrared Studies of Silicon/Silicon Oxide Interfaces Derived from Hydridosilsesquioxane Clusters.

The Role of Second-Neighbor Effects in Photoemission: Are Silicon Surfaces and Interfaces Special?

A New Model Silicon/Silicon Oxide Interface Synthesized from H₁₀Si₁₀O₁₅ and Si(100)-2x1.

Chloroethane Physisorbed on Hydrogenated Si(111): A Test System for the Evaluation of Core Level XPS Assignment Rules at Si/SiO₂ Interfaces.

Soft X-ray Si 2p core-level spectra of H₈Si₈O₁₂ physisorbed on Si(111)-H: additional experimental evidence regarding the binding energy shift of the HSiO₃ fragment.

The Role of Extra-Atomic Relaxation in Determining Si 2p Binding Energy Shifts at Silicon/Silicon Oxide Interfaces.